Abstract

Two-dimensional transient electroluminescent devices have attracted considerable attention owing to their simple device architecture and reduced contact-barrier dependence. However, the influence of semiconductor transport polarity on transient electroluminescence (EL) remains unclear. Here, we compare four representative transition metal dichalcogenide (TMDC) semiconductors with different transport polarities and find that ambipolar WSe2 exhibits a stronger transient EL signal under identical driving conditions, a trend that cannot be explained by relative photoluminescence quantum yield (PLQY) alone. Transfer characteristics and gate-modulated photoluminescence (PL) measurements were further used to analyze the gate-dependent carrier doping states and the local spectral response associated with interfacial carrier modulation near the metal/TMDC interface during abrupt gate-voltage switching. Based on these results, we propose a possible physical picture in which ambipolar WSe2 is more likely to form a transient interfacial electron–hole distribution favorable for electron–hole radiative recombination, whereas predominantly n-type materials tend to form electron-rich interfacial carrier states. These findings suggest that semiconductor transport polarity is an important material factor for designing low-dimensional transient electroluminescent devices.

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